Small Signal Models of MOS Technology Transistors
نویسنده
چکیده
In this supplement to formal class lectures, we develop the small signal models for metaloxide-semiconductor field-effect transistor (MOSFET) technologies. Despite the exclusive focus on MOS technologies, the reader will surmise that the fundamental concepts and strategies of small signal modeling presented herewith are generally applicable to bipolar, III-V compound, and other semiconductor devices that offer an input port for signal application and an output port for signal responses. To this end, we shall assert that while the specific branch parameter values of the models we develop assuredly change as a function of the addressed device technology, the circuit topologies of virtually all small signal device models remain invariant with technology.
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